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Dislocation-free oxidation of porous silicon formed using highly phosphorus-diffused silicon and its applicationARITA, Y; KURANARI, K.Japanese journal of applied physics. 1997, Vol 36, Num 3A, pp 1040-1046, issn 0021-4922, 1Article

Characteristics of the electric capacitance and dielectric loss of the thermal oxide of porous silicon formed using highly phosphorus diffused siliconARITA, Y; KURANARI, K.Japanese journal of applied physics. 1997, Vol 36, Num 3A, pp 1035-1039, issn 0021-4922, 1Article